Silicon nitrogen-based films and method of making the same

Details Silicon nitrogen-based films and method of making the same Silicon nitrogen-based films and method of making the same

1997-11-26

1999-10-19

Meeks, Timothy

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427585, 427255393, 427255394, 4272557, 438791, 438792, 438793, 438794, C23C 1634

Patent

active

059686111

ABSTRACT:
A method for chemical vapor deposition of a silicon-nitrogen based film onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a haloethylsilane precursor in the vapor state; and (iii) at least one nitrogen-containing reactant gas; and maintaining the deposition temperature within the chamber as from about 200.degree. C. to about 1000.degree. C. for a period of time sufficient to deposit a silicon-nitrogen based film on the substrate. Silicon-nitrogen based films are also included which are formed by chemical vapor deposition using a haloethylsilane precursor in a vapor state and at least one reactant gas comprising nitrogen.

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Ebsworth, E.A.V., Volatile Silicon Compounds, (1963), pp. 101-120. (no month).
Valdes, J.L. et al., "Siliane Alternatives for Silicon IC Manufacturing," 27th International SAMPE Technical Conference, (Oct. 9-12, 1995), pp. 315-327.
Arkles, Barry, "Silicon Nitride from Organosilazane Cyclic and Linear Prepolymers," Journal of the Electrochemical Society, vol. 133, No. 1 (1986), pp. 233-234. (no month).
Schuh, Heinz et al., "Disilanyl-amines-Compounds Comprising the Structural Unit Si-Si-N, as Single-Source Precursors for Plasma-Enhanced Chemical Vapour Deposition (PE-CVD) of Silicon Nitride," Z. anorg. allg. Chem. 619 (1993), pp. 1347-1352. (no month).

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