Split gate memory cell with vertical floating gate

Details Split gate memory cell with vertical floating gate Split gate memory cell with vertical floating gate

1994-09-30

1997-12-30

Yoo, Do Hyun

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, G11C 1300

Patent

active

057033870

ABSTRACT:
A vertical split gate memory device has a semiconductor substrate with a trench and a floating gate formed on a sidewall of the trench, thus reducing the surface area of each memory cell. The fabrication process for this device allows precise control over the consistency during fabrication because the length of the floating gate is controlled by the depth of a trench etch and the location of the drains and sources are self-aligned by oxide spacers which act as masks during the doping process.

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patent: 5331189 (1994-07-01), Chan et al.
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patent: 5506431 (1996-04-01), Thomas
patent: 5508544 (1996-04-01), Shah

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