Method of fabricating a glue layer of contact/via

Details Method of fabricating a glue layer of contact/via Method of fabricating a glue layer of contact/via

1998-11-25

2000-10-31

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438644, 438666, 438672, 438669, 437190, 437192, 437194, 437195, H01L 214763

Patent

active

061402273

ABSTRACT:
A method of fabricating a glue layer of a contact/via. A substrate is provided and a contact/via opening is formed within a dielectric layer on the substrate to expose the substrate. A glue layer is formed to cover the contact/via opening and conformal the structure. An RF sputtering process is performed on the substrate to remove an overhang structure on the upper corner of the glue layer while it is formed. A conductive layer is then formed in the contact/via opening to electrically connect to the substrate.

REFERENCES:
patent: 5534462 (1996-07-01), Fiordalice et al.
patent: 5874356 (1999-02-01), Chen et al.
patent: 5899741 (1999-05-01), Tseng et al.
patent: 5958508 (1999-09-01), Adetutu et al.

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