Semiconductor device with capacitor

Details Semiconductor device with capacitor Semiconductor device with capacitor

1996-07-23

1998-12-22

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257768, H01L 2978

Patent

active

058523073

ABSTRACT:
A semiconductor device comprising a semiconductor substrate and a capacitor formed on the semiconductor substrate, wherein the capacitor is formed of a multilayer comprising a first electrode disposed close to the semiconductor substrate, a second electrode disposed remote from the semiconductor substrate and a dielectric film formed of a metal oxide and interposed between the first electrode and the second electrode, and at least either one of the first and second electrodes contains oxygen and is constituted by an element selected from either one of Group 7A and Group 8 elements belonging to either one of the fifth and sixth periods of Periodic Table, the content of oxygen being in a range of 0.004 to 5 atom.%.

REFERENCES:
patent: 4959745 (1990-09-01), Suguro
patent: 5576928 (1996-11-01), Summerfelt et al.

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