Process for producing phosophorous-doped silicon monocrystals ha

Details Process for producing phosophorous-doped silicon monocrystals ha Process for producing phosophorous-doped silicon monocrystals ha

1976-10-26

1978-11-21

Emery, Stephen J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156620, 156DIG64, B01J 1712, B01J 1740

Patent

active

041265092

ABSTRACT:
A process for producing phosphorous-doped silicon monocrystals having a select peripheral depletion or enrichment of dopant atoms along the radial direction of such monocrystals comprises providing a silicon monocrystalline rod homogeneously doped with phosphorous, as by neutron doping, and subjecting such homogeneously doped monocrystalline rod to a peripheral zone melt cycle in a select atmosphere such that the peripheral melt zone depth within the monocrystalline rod is controlled so as to be less than the radius of the rod in accordance with the desired peripheral dopant concentration in the ultimately attained rod.

REFERENCES:
patent: 2854363 (1958-09-01), Seiler
patent: 3167512 (1965-01-01), Ziegler
patent: 3177051 (1965-04-01), Scholte
patent: 3210165 (1965-10-01), Van Run et al.
patent: 3585008 (1971-06-01), Keller et al.
patent: 3773499 (1973-11-01), Melnikov
patent: 3804682 (1974-04-01), Keller
patent: 3915660 (1975-10-01), Keller et al.
patent: 3954416 (1976-05-01), Keller
Tanenbaum et al., "Preparation of Uniform Resistivity n-Type Silicon by Nuclear Transmutation," J. Electro Chem. Soc., vol. 108, No. 2, pp. 171-176 (Feb. 1961).

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