Semiconductor device and method for forming the device using a d

Details Semiconductor device and method for forming the device using a d Semiconductor device and method for forming the device using a d

1997-04-04

1998-12-22

Dutton, Brian

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438664, H01L 2144

Patent

active

058519211

ABSTRACT:
An integrated circuit is formed by a process which can produce highly conductive contact structures. The contact structures result from a dual layer of titanium and cobalt reacted upon silicon-rich source/drain junctions and gate conductor upper surfaces. Reaction on the silicon-rich regions occur concurrent with one another using a self-aligned salicidation process, whereby the titanium layer can consume relatively large amounts of native oxide formed on the silicon-rich regions. In addition to interdiffusion of titanium, cobalt placed upon the titanium enhances the overall conductivity of the contact while providing some barrier properties against undue, additional interdiffusion of titanium and underlying silicon.

REFERENCES:
patent: 5047367 (1991-09-01), Wei et al.
patent: 5103272 (1992-04-01), Nishiyama
patent: 5529958 (1996-06-01), Yaoita
patent: 5567652 (1996-10-01), Nishio
patent: 5691212 (1997-11-01), Tsai et al.

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