Method of manufacturing an isolation region of a semiconductor d

Details Method of manufacturing an isolation region of a semiconductor d Method of manufacturing an isolation region of a semiconductor d

1997-04-11

1998-12-22

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438443, 438452, 438297, H01L 2176

Patent

active

058519017

ABSTRACT:
A semiconductor device manufacturing method of forming an isolation region of a semiconductor device with high planarization is provided. A semiconductor device is formed by forming a mask over a portion of a semiconductor substrate, the mask defining an exposed portion of the substrate. A first oxide region is grown in the exposed portion of the substrate and a second oxide region is formed over the first oxide region to form a composite oxide region. The mask is removed while leaving the composite oxide region. Spacers may be formed on sidewalls of the mask and removed after growing the first oxide region. The composite oxide region may, for example, form a field oxide region.

REFERENCES:
patent: 5472905 (1995-12-01), Paek
patent: 5567645 (1996-10-01), Ahn et al.
patent: 5679602 (1997-10-01), Lin et al.
patent: 5728622 (1998-03-01), Yu

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