Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-04-18
1998-12-22
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438487, 117 8, H01L 21324, H01L 21336
Patent
active
058518622
ABSTRACT:
A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the laser light is irradiated to the silicon film, since the aluminum nitride film absorbs heat, a portion of the silicon film near the aluminum nitride film is solidified immediately. However, since a solidifying speed is slow in another portion of the silicon film, crystallization progresses from the portion near the aluminum nitride film. When a substrate temperature is 400.degree. C. or higher at laser irradiation, since a solidifying speed is decreased, a crystallinity of the silicon film is increased. Also, when the substrate is thin, the crystallinity of the silicon film is increased.
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Miyanaga Akiharu
Ohtani Hisashi
Takemura Yasuhiko
Yamazaki Shunpei
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski Mary
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