Method for producing a silicon single crystal wafer and a silico

Details Method for producing a silicon single crystal wafer and a silico Method for producing a silicon single crystal wafer and a silico

1999-03-08

2000-10-31

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, C30B 1504

Patent

active

061396257

ABSTRACT:
There is disclosed a method of producing a silicon single crystal wafer wherein a silicon single crystal ingot in which nitrogen is doped is grown by Czochralski method, the single crystal ingot is sliced to yield a silicon single crystal wafer, and then the silicon single crystal wafer is subjected to heat treatment with a rapid heating/rapid cooling apparatus, and the silicon single crystal wafer produced by the method. There can be provided a method for producing a silicon single crystal wherein growth of crystal defects (grown-in defects) in silicon single crystal produced by CZ method are suppressed, particularly growth of crystal defects are prevented in the surface layer of the wafer, and crystal defect can be surely removed by a short time heat treatment even if small crystal defects are generated.

REFERENCES:
patent: 5897381 (1999-04-01), Aronowitz et al.
Watanabe, et al., "Controlled Oxygen Doping in Silicon," 14th International Conference on Solid State Devices and Materials; JP J. Applied Physics Supplement 22-1, vol 22, No. 22-1, pp. 185-189.
Maddalon-Vinante, C. et al., "Influence of Rapid Thermal Annealing and Internal Gettering on Czochralski-Grown Silicon. I. Oxygen Precipitation," Journal of Applied Physics, vol. 79, No. 5, Mar. 1, 1996, pp. 2707-2711.
Shimura, et al., "Nitrogen Effect on Oxygen Precipitation in Czochralski Silicon," Applied Physics Letters., vol. 48, No. 3, 1986, pp. 224-226.
Akito Hara, et al., "Enhancement of Oxygen Precipitation in Quenched Czochralski Silicon Crystals," Journal of Applied Physics, vol. 66, No. 8, Oct. 15, 1989, pp. 3958-3960.

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