Process for formation of capacitor electrode for semiconductor d

Details Process for formation of capacitor electrode for semiconductor d Process for formation of capacitor electrode for semiconductor d

1994-08-19

1997-12-16

Hamilton, Cynthia

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

216 6, 437919, G03F 740, H01L 2170

Patent

active

056983751

ABSTRACT:
The invention discloses a process for formation of a capacitor for a semiconductor device. The upper node electrode is supported by side wall spacers and a central pole, so that the supporting strength may be reinforced and the surface area may be increased. During the formation of a contact hole, a first side wall spacer is formed, and, by utilizing the first side wall spacer, a contact hole is opened with a greater margin. The upper and lower node electrodes are of a tunnel structure. The central pole of the node electrodes is provided with a hole in it, so that a conductive material may be filled into the hole to form a connecting portion. This connecting portion connects the node electrodes of the capacitor to a source/drain region which is formed on a semiconductor substrate. A thin dielectric film is deposited on the surface of the node electrode, and a plate electrode is formed thereupon, thereby completing the formation of the capacitor.

REFERENCES:
patent: 3365378 (1968-01-01), Maissel et al.
patent: 3653898 (1972-04-01), Shaw
patent: 5162253 (1992-11-01), Takeuchi
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5444010 (1995-08-01), Park et al.
N. Matsuo, et al.; "Tunnel Structured Stacked Capacitor Cell (TSSC) for 64 MBit dRams"; 1991 International Conference on Solid State Devices and Materials, Yokohama; pp. 475-477.
N. Shinmura, et al.; "A Stacked Capacitor Cell With Ring Structure"; 1990 Intern'l Conf. on Solid State Devices & Material, Sendai; pp. 833-834.
Hyundai Electronics Industries Co.,Ltd.;Hyundai literature pp. 399-400.

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