Method for forming aluminum contacts

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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Details

20419215, 20419217, 438648, 438652, 438653, 438656, C23C 1400

Patent

active

058513647

ABSTRACT:
A process for making an aluminum contact comprising sputter depositing in a contact opening in a semiconductor substrate a first layer of titanium, forming a thin layer of titanium oxide thereover, sputter depositing a titanium nitride layer, smoothing the titanium nitride layer in an argon plasma, and sputter depositing an aluminum contact over the treated titanium nitride layer. The argon plasma treatment smooths the surface of the titanium nitride layer and improves the wettability between this layer and aluminum.

REFERENCES:
patent: 5290731 (1994-03-01), Sugano et al.
patent: 5378660 (1995-01-01), Ngan et al.
patent: 5427666 (1995-06-01), Mueller et al.
patent: 5449954 (1995-09-01), Ito

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