Electrostatic discharge protection circuit for a NMOS or lateral

Details Electrostatic discharge protection circuit for a NMOS or lateral Electrostatic discharge protection circuit for a NMOS or lateral

1994-08-17

1996-05-21

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257362, 257363, H01L 2362

Patent

active

055192424

ABSTRACT:
An electrical circuit including an NMOS or lateral NPN bipolar transistor includes a zener diode connected thereto to provide ESD protection for the transistor. The NMOS transistor includes an N-type source, an N-type drain, a P-type channel region and a gate over and insulated from the channel region. The zener diode is electrically connected between the gate and the drain of the NMOS transistor with the anode of the zener diode being connected to the gate and the cathode of the zener diode being connected to the drain. For some purposes the anode of the zener diode is positioned close to the gate to provide the desired ESD protection. The lateral NPN bipolar transistor includes an N-type emitter and collector and a P-type base. The zener diode is connected between the collector and the base with the anode of the zener diode being connected to the base and the cathode of the zener diode being connected to the emitter.

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"Semiconductor chip Pad Protect Device", Kalter, IBM Technical Disclosure Bulletin, vol. 15 No. 12, May 1973, pp. 3753 and 3754.

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