Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-02-28
1996-05-21
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257322, 257435, 310309, H01L 2910, H01L 2978
Patent
active
055192408
ABSTRACT:
An electrostatically driven microshutter comprises a substrate having a principal surface, a floating gate on the principal surface of the substrate, and a shutter mechanism formed of conductive material and electrically connected to the floating gate, the shutter mechanism comprising a shutter and resilient support means for supporting the shutter from the principal surface so that the shutter is movable in a direction parallel to the principal surface by electrostatic repulsion between the shutter and the floating gate. A transistor is provided for injecting electrons into the floating gate in response to a first voltage signal and decreasing the electrons injected in the shutter mechanism in response to a second voltage signal.
REFERENCES:
patent: 5270562 (1993-12-01), Waidart
patent: 5396066 (1995-03-01), Ikeda et al.
patent: 5428259 (1995-06-01), Suzaki
Monin, Jr. Donald L.
NEC Corporation
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