Polycrystalline ferroelectric capacitor heterostructure employin

Details Polycrystalline ferroelectric capacitor heterostructure employin Polycrystalline ferroelectric capacitor heterostructure employin

1994-11-18

1996-05-21

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257763, 3613213, 428701, 437 60, 437919, H01L 2976, H01L 31062

Patent

active

055192351

ABSTRACT:
Ferroelectric capacitor heterostructures exhibiting exceptional reliability and resistance to fatigue and imprinting comprise hybrid electrodes of highly conductive platinum with polycrystalline metallic oxide and ferroelectric materials deposited on Si-CMOS-compatible substrates without the requirement for interposed crystallographic orientation templates.

REFERENCES:
patent: 5155658 (1992-10-01), Inam et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5270298 (1993-12-01), Ramesh
patent: 5387459 (1995-02-01), Hung

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