Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-05-05
2000-07-18
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257760, 257764, 257754, H01L 2348, H01L 2352, H01L 2940
Patent
active
060911522
ABSTRACT:
A method for fabricating a semiconductor device of the invention, the method includes the steps of: providing an oxygen concentration in a region of a silicon film of 1.times.10.sup.18 cm.sup.-3 or less; depositing a film including a metal on the silicon film; and reacting the silicon film with the film including a metal so as to form a metal silicide film in the region of the silicon film.
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Clark Jhihan B
Hardy David
Sharp Kabushiki Kaisha
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