Self-aligned SOI device with body contact and NiSi.sub.2 gate

Details Self-aligned SOI device with body contact and NiSi.sub.2 gate Self-aligned SOI device with body contact and NiSi.sub.2 gate

1998-06-08

2000-07-18

Fourson, George

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, H01L 21336

Patent

active

060911239

ABSTRACT:
A self-aligned SOI device with body contact and silicide gate. The SOI device is formed using an ordinary substrate such as silicon. A silicide gate is self-aligned and formed from re-crystallization of nickel and amorphous silicon. The self-aligned silicide gate includes gate contact areas, and is self-aligned with respect to the gate opening, the source and drain regions and a nitride isolation layer. Nickel spacers deposited adjacent the isolation layer, and amorphous silicon deposited between the nickel spacers, form the self-aligned silicide gate through a silicidation process.

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patent: 5851890 (1998-12-01), Tsai et al.
patent: 5854509 (1998-12-01), Kunikiyo
Ghandhi, Sorab K. "VLSI Fabrication Principles" (John Wiley & Sons) Jan. 1983.
Wolf, Stanley "Silicon Processing for the VLSI Era vol. 2" (Lattice Press) 1990.
Article entitled, "Spatially Confined Nickel Disilicide Formation at 400.degree.C On Ion Implantation Preamorphized Silicon" Author: Erokhin et al. Dec. 6, 1993.

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