Semiconductor device including a crystalline silicon film

Details Semiconductor device including a crystalline silicon film Semiconductor device including a crystalline silicon film

1997-11-14

2000-07-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257412, 257413, 257750, 257762, 257766, 438153, 438154, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

060911158

ABSTRACT:
A semiconductor device having a CMOS structure comprising N-channel type and P-channel type insulated gate semiconductor devices combined in a complementary manner, wherein the threshold voltage of the insulated gate semiconductor devices is controlled by using the difference in work function between the gate electrode and the active layer. The present semiconductor device has excellent uniformity and reproducibility.

REFERENCES:
patent: 4319395 (1982-03-01), Lund et al.
patent: 4399605 (1983-08-01), Dash et al.
patent: 4905073 (1990-02-01), Chen et al.
patent: 5061647 (1991-10-01), Roth et al.
patent: 5247198 (1993-09-01), Homma et al.

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