High density NAND structure nonvolatile memories

Details High density NAND structure nonvolatile memories High density NAND structure nonvolatile memories

1998-02-06

2000-07-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257321, 257324, 257325, H01L 29792

Patent

active

06091100&

ABSTRACT:
The present invention includes pad oxides that are separated from each other and on a substrate. First isolations are formed on the pad oxides. Second isolations are formed on the substrate, between the pad oxides. Floating gates are formed on the second isolations and between the first isolations. Third isolations are formed at the top of the floating gates. A word line is formed on the first isolations and on the third isolations. Bit lines are formed in the substrate and under the first isolations.

REFERENCES:
patent: 5032881 (1991-07-01), Sardo et al.
patent: 5053840 (1991-10-01), Yoshikawa
patent: 5306935 (1994-04-01), Esquivel et al.
patent: 5541130 (1996-07-01), Oguva et al.
patent: 5841162 (1998-11-01), Enomoto

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