HgCdTe MIS device having a CdTe heterojunction

Details HgCdTe MIS device having a CdTe heterojunction HgCdTe MIS device having a CdTe heterojunction

1989-05-16

1989-12-05

James, Andrew J.

357 52, 357 54, 357 60, 357 61, H01L 2978, H01L 2934, H01L 2904

Patent

active

048856193

ABSTRACT:
A MIS semiconductor device comprises a crystalline substrate having a first energy band gap and a crystalline passivation layer overlying a surface of the substrate. The passivation layer is comprised of a semiconductor material having a wider band gap than the semiconductor material of the substrate. In an illustrative embodiment of the invention a MIS semiconductor device comprises a mercury-cadmium-telluride (HgCdTe) substrate having a cadmium-telluride (CdTe) heterojunction formed thereon, the CdTe functioning as a layer of high-quality passivation. A metal gate insulator may be SiO.sub.2, low temperature CVD Si.sub.3 N.sub.4, or any other suitable insulator deposited at a relatively low temperature.

REFERENCES:
patent: 4132999 (1979-01-01), Maille et al.
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patent: 4377904 (1983-03-01), Chapman et al.
patent: 4424525 (1984-01-01), Mimura
patent: 4635083 (1987-01-01), Cooper, Jr.
patent: 4658277 (1987-04-01), Schiebel

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