Method for manufacturing semiconductor device

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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29576W, 29580, 148187, 156651, 156653, 156657, 1566611, 357 49, 427 88, 430313, H01L 21306, H01L 21312, B44C 122, C03C 1500

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044459670

ABSTRACT:
The invention provides a method for manufacturing a semiconductor device, comprising the steps of: forming a mask material pattern at least on a portion of a semiconductor layer which corresponds to a prospective element formation region; etching the semiconductor layer, using the mask material pattern, to form a first groove which is wide and shallow; burying a first isolating material in the first groove to a thickness substantially equal to the depth of the first groove; etching a portion of the first isolating material film which is located in the vicinity of the prospective element formation region to partially expose a bottom of the first groove, thereby forming a second groove which is narrower than said first groove, a position of the second groove being defined by the mask material pattern; forming a third groove which is deeper than said first and second grooves by etching a bottom of the second groove; and burying a second isolating material in the third groove.

REFERENCES:
IBM Technical Disclosure Bulletin, vol. 19, No. 12 (May 1977), Minimizing "Bird's Beak" When Forming Recessed Dielectric Isolation by I. Antipov, pp. 4596-4597.
"A New Bird's-Beak Free Field Isolation Technology for Vlsi Devices", K. Kurosawa et al., IEDM Dig. Tech. Papers, pp. 384-387 (1981).

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