MOS type semiconductor device

Details MOS type semiconductor device MOS type semiconductor device

1991-08-09

1993-09-14

Davie, James W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2348

Patent

active

052452107

ABSTRACT:
In a MOS type semiconductor device, a first contact hole having a length similar to a width of source/drain diffusion layers is opened in a first layer insulation film. In the first contact hole, a refractory metal or the like is filled and a second layer insulation film is formed to cover the same. In the second layer insulation film, a second contact hole having an area smaller than that of the first contact hole is opened and, through this second contact hole, an aluminum interconnection and the source/drain regions are electrically connected. Therefore, it becomes possible to avoid decrease of ON current of a transistor owing to resistance elements of the source/drain diffusion layers and at the same time to reduce an area occupied by the aluminum interconnection to be connected to the source/drain regions on a transistor device.

REFERENCES:
patent: 4914050 (1990-04-01), Shibata
patent: 5060045 (1991-10-01), Owada et al.
patent: 5103285 (1992-04-01), Furumura et al.

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