Integrated circuit

Details Integrated circuit Integrated circuit

1990-08-17

1993-09-14

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257393, 257402, H01L 2978, H01L 2986

Patent

active

052452077

ABSTRACT:
A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.

REFERENCES:
patent: 3673471 (1972-06-01), Klein et al.
patent: 4528474 (1985-07-01), Kim
patent: 4583105 (1986-04-01), Rosenberg
patent: 4605947 (1986-08-01), Price et al.
patent: 4660062 (1987-04-01), Nishizawa et al.
patent: 4841346 (1989-06-01), Noguchi
patent: 4954744 (1990-09-01), Suzuki et al.
Muller & Kamins, "Device Electronics for IC's" .COPYRGT.1986 pp. 54 & 130.
Glasser et al., "The Design and Analysis of VLSI Circuits" .COPYRGT.1985 p. 60.

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