Method of vapor phase growth

Details Method of vapor phase growth Method of vapor phase growth

1981-03-20

1983-12-06

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG70, C30B 2510

Patent

active

044191790

ABSTRACT:
A method of vapor phase growth of GaAs under kinetically limited growth conditions, by which an epitaxial layer of GaAs having an enhanced thickness uniformity can be formed on the surface of a substrate having a large area with good reproducibility. A substrate crystal is placed in a uniform temperature region where the growth temperature T.sub.D (K) is maintained at a level of approximately 650.degree. to approximately 700.degree. C. and GaAs is grown in the uniform temperature region while maintaining the molar fraction (MF) of arsenic in the feed gas within a range of 2.6.times.10.sup.11 exp(-3.1.times.10.sup.4 /T.sub.D)>MF>1.5.times.10.sup.17 exp(-4.5.times.10.sup.4 /T.sub.D).

REFERENCES:
patent: 4007074 (1977-02-01), Ogirima et al.
patent: 4172756 (1979-10-01), Hollan
patent: 4190470 (1980-02-01), Walline

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