Method of manufacturing bipolar transistor operated at high spee

Details Method of manufacturing bipolar transistor operated at high spee Method of manufacturing bipolar transistor operated at high spee

1992-01-02

1993-09-14

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 31, 437162, 437909, 148DIG10, 148DIG124, H01L 21265, B44C 122

Patent

active

052445330

ABSTRACT:
According to this invention, in a method of manufacturing a bipolar transistor, a first oxide film, a nitride film, a first polysilicon film containing boron, and a second oxide film are formed on a substrate. A first opening is formed in the second oxide film and the first polysilicon film. The nitride film and the first oxide film are etched in and near the first opening to form overhung portions between the substrate and the first semiconductor film around the first opening. A second polysilicon film for burying the overhung portions is formed on the entire surface of the resultant structure. Thereafter, boron in the second polysilicon film is thermally diffused in the substrate to form an external base region and a link region. The second polysilicon film is etched to leave the second polysilicon film at only the overhung portions. After an internal base region formed in the substrate. Thereafter, an emitter region formed in the internal base region.

REFERENCES:
patent: 4830972 (1989-05-01), Hamasaki
patent: 4975381 (1990-12-01), Taka et al.
patent: 4994400 (1991-02-01), Yamaguchi et al.
patent: 4996581 (1991-02-01), Hamasaki

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