Single surface LPE crystal growth

Details Single surface LPE crystal growth Single surface LPE crystal growth

1981-04-27

1982-07-27

Clements, Gregory N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156621, 156DIG63, 427300, C30B 1912

Patent

active

043415903

ABSTRACT:
A method and apparatus for growing liquid phase epitaxial (LPE) crystals upon only one surface of a supporting substrate. The method requiring the insertion of a gasket between a pair of substrates, upon whose exposed surfaces it is desired to grow an LPE crystal. The gasket essentially acting to contain a meniscus of entrapped flux and thereby entrap an air bubble between the substrates so as to prevent growth upon the interior surfaces of the assembly.

REFERENCES:
patent: 3359143 (1967-12-01), Heywang et al.
patent: 3419424 (1968-12-01), Steggewentz et al.
patent: 3493444 (1970-02-01), Sirtl et al.
patent: 3533856 (1970-10-01), Panish et al.
patent: 3546032 (1970-12-01), Basart
patent: 4200484 (1980-04-01), Glass
patent: 4259365 (1981-03-01), Ruppel et al.

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