Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1999-10-29
2000-10-03
Elms, Richard
Static information storage and retrieval
Read/write circuit
Differential sensing
365158, 365171, 365173, G11C 702
Patent
active
061282391
ABSTRACT:
Resistance of a selected memory cell in a Magnetic Random Access Memory ("MRAM") device is sensed by a read circuit including a direct injection charge amplifier, an integrator capacitor and an analog sense amplifier. The direct injection charge amplifier supplies current to the integrator capacitor while maintaining an equipotential voltage on non-selected memory cells in the MRAM device. As the direct injection charge amplifier applies a fixed voltage to the selected memory cell, the sense amplifier generates an input signal having a transition that is time-delayed according to the voltage on the integrator capacitor; generates a reference signal having a time-fixed transition; and compares a relative occurrence of transitions in the input and reference signals. The relative occurrence indicates whether a logic value of `0` or `1` is stored in the selected memory cell.
REFERENCES:
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5831920 (1998-11-01), Chen et al.
patent: 5838608 (1998-11-01), Zhu et al.
patent: 5852574 (1998-12-01), Naji
patent: 5982660 (1999-11-01), Bhattacharyya et al.
patent: 5986925 (1999-11-01), Naji et al.
patent: 6055178 (2000-04-01), Naji
Elms Richard
Hewlett-Packard
Nguyen Hien
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