Shallow trench isolation method employing self-aligned and plana

Details Shallow trench isolation method employing self-aligned and plana Shallow trench isolation method employing self-aligned and plana

1997-03-03

1997-12-30

Dang, Trung

Fishing, trapping, and vermin destroying

437 63, 437 64, 437238, 437228, 148DIG50, H01L 2176

Patent

active

057029776

ABSTRACT:
A method for forming within a trench within a substrate within an integrated circuit a planarized trench fill layer. There is first provided a substrate having a trench formed therein. There is formed upon the substrate at regions other than those within the trench a first integrated circuit layer which has a composition which inhibits formation upon the first integrated circuit layer of a trench fill layer which is subsequently formed upon the substrate and within the trench. There is also formed within the trench but not upon the substrate at regions other than those within the trench a second integrated circuit layer which has a composition which promotes formation within the trench of the trench fill layer which is subsequently formed upon the substrate and within the trench. Finally, there is formed upon the substrate and within the trench the trench fill layer. The trench fill layer is formed to a thickness over the trench such that when the trench fill layer is planarized through a chemical mechanical polish (CMP) planarizing method there is avoided formation of a dish within a planarized trench fill layer formed within the trench.

REFERENCES:
patent: 5346584 (1994-09-01), Nasr et al.
patent: 5385861 (1995-01-01), Bashir et al.
patent: 5420075 (1995-05-01), Homma et al.
patent: 5459096 (1995-10-01), Venkatesan et al.
patent: 5472904 (1995-12-01), Figura et al.
patent: 5492858 (1996-02-01), Bose et al.

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