Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-04-04
1996-04-02
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257506, 257757, H01L 2702, H01L 2348
Patent
active
055043763
ABSTRACT:
In a method of manufacturing a stacked-type semiconductor device, firstly, a first semiconductor substrate having a first device formed thereon is covered with an interlayer insulating layer and a planarized polycrystalline silicon layer is formed on the interlayer insulating layer. The first semiconductor substrate and a second semiconductor substrate are joined together by putting the surface of the polycrystalline silicon layer in close contact with the surface of a refractory metal layer formed on the second semiconductor substrate, applying thermal treatment at 700.degree. C. or below and changing the refractory metal layer to silicide.
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Ajika Natsuo
Ipposhi Takashi
Iwamatsu Toshiaki
Ogawa Toshiaki
Sugahara Kazuyuki
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
Ostrowski David
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