Semiconductor structure for electrostatic discharge protection

Details Semiconductor structure for electrostatic discharge protection Semiconductor structure for electrostatic discharge protection

1992-09-30

1993-12-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257546, 257549, 257566, 257579, 361 56, 361 58, 3072964, H01L 2362, H01L 2900, H01L 27082, H01L 27102

Patent

active

052685888

ABSTRACT:
A semiconductor structure (30) is provided for electrostatic discharge protection. A first bipolar transistor (Q1) has a collector electrically coupled to a first node (12), a base electrically coupled to a second node, and an emitter electrically coupled to a third node (14). A second bipolar transistor (Q2) has a collector, a base electrically coupled to the second node, and an emitter electrically coupled to the first node (14). The second bipolar transistor (Q2) supplies a base current to the base of the first bipolar transistor (Q1) in response to the first node (12) reaching a threshold voltage relative to the third node (14), so that the first bipolar transistor (Q1) conducts current between the first (12) and third (14) nodes in response to the base current.

REFERENCES:
patent: 4819047 (1989-04-01), Gilfeather et al.
patent: 4982262 (1991-01-01), Hartman et al.
patent: 4994874 (1991-02-01), Shimizu et al.
patent: 5001529 (1991-03-01), Ohshima et al.
patent: 5072271 (1991-12-01), Shimizu et al.
patent: 5077591 (1991-12-01), Chen et al.

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