Method for manufacturing polysilicon thin film transistor

Details Method for manufacturing polysilicon thin film transistor Method for manufacturing polysilicon thin film transistor

1995-02-27

1997-12-30

Trinh, Michael

Fishing, trapping, and vermin destroying

437 41TFT, 437229, H01L 21786

Patent

active

057029601

ABSTRACT:
A method for manufacturing a polysilicon thin film transistor in which a lower gate pattern is formed by stacking a conductive material on a transparent substrate, then a buffering insulating layer, a polysilicon layer, a gate insulating layer and a conductor layer are formed by sequentially stacking an insulating material, a polysilicon, an insulating material and a conductive material. Then a photoresist pattern is formed by coating a photoresist and exposing the backside of the photoresist using the lower gate pattern, and thereafter, an upper gate pattern is formed by etching the conductor layer using the photoresist pattern as a mask. The method of the present invention is suitable for manufacturing the polysilicon thin film transistor of an offset structure or of an LDD structure.

REFERENCES:
patent: 5130263 (1992-07-01), Possin et al.
patent: 5198377 (1993-03-01), Kato et al.
patent: 5198379 (1993-03-01), Adan
patent: 5246468 (1993-09-01), Takahashi et al.
patent: 5348897 (1994-09-01), Yen
patent: 5371025 (1994-12-01), Sung
patent: 5385854 (1995-01-01), Batra et al.
patent: 5420048 (1995-05-01), Kondo

Affiliated with

Also associated with

Rating

Method for manufacturing polysilicon thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing polysilicon thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing polysilicon thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-201739