Method of forming a planar contact with a void

Fishing – trapping – and vermin destroying

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437190, 437192, 437194, 437195, H01L 21283

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active

055717527

ABSTRACT:
A method is provided for patterning a submicron semiconductor layer of an integrated circuit, and an integrated circuit formed according to the same. A first conductive structure is formed over the integrated circuit. A dielectric is formed over the first conductive structure having a contact opening exposing a portion of the underlying first conductive layer. A barrier layer is formed in the bottom of the contact opening. A second, substantially conformal conductive layer is formed by chemical vapor deposition over the dielectric layer; along the sidewalls and in the bottom of the contact opening. A third conductive layer is then formed over the second conductive layer wherein the third conductive layer does not fill the contact opening. The second and third conductive layers are etched to form an interconnect substantially over the contact opening.

REFERENCES:
patent: 4502210 (1985-03-01), Okumura et al.
patent: 4876223 (1989-10-01), Yoda et al.
patent: 4892844 (1990-01-01), Cheung et al.
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 4920071 (1990-04-01), Thomas
patent: 4960732 (1990-10-01), Dixit et al.
patent: 4970573 (1990-11-01), Roberts et al.
patent: 5104826 (1992-04-01), Fujita et al.
Ellwanger, R. C., et al., "An Integrated Aluminum . . .", Jun. 11-12, 1991 VMIC Conf., 1991 IEEE, pp. 41-50.
IBM Technical Disclosure Bulletin, vol. 22, No. 8A, Jan. 1980, Nitride-Limited Schottky Barrier Diode Design, F. H. Gaensslen, pp. 3397-3398.

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