Mixed gas supply system with a backup supply system

Details Mixed gas supply system with a backup supply system Mixed gas supply system with a backup supply system

1994-05-02

1995-11-28

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

Multizone chamber

118715, C23C 1600

Patent

active

054703905

ABSTRACT:
A first MFC 10 and a second MFC 10A are disposed respectively on a silane gas feed line 5 and an inert gas or other dilution gas feed line 19 for feeding a gas for semiconductors such as silane gas or an inert gas or other dilution gas to a mixing chamber 13. A buffer tank 21 is provided which restrains or relieves the pressure energy of the mixed gas coming from the mixing chamber 13 and supplies the same mixed gas to each of a plurality of semiconductor manufacturing units 4 separately. The first MFC 10 and second MFC 10A are actuated to open or close on the basis of an increase or decrease in the pressure value of the mixed gas stored in the buffer tank 21, thereby stopping or starting the feed of the silane gas and the inert gas or other dilution gas again.

REFERENCES:
patent: 3330773 (1967-07-01), De Hart, Jr.
patent: 5279129 (1994-01-01), Ito
patent: 5281295 (1994-01-01), Maeda
Patent Abstracts of Japan, vol. 7, No. 226 (E-202), Oct. 7, 1983, JP-A-58115812, Jul. 9, 1983.
Patent Abstracts of Japan, vol. 8, No. 184 (C-239), Aug. 23, 1984, JP-A-59080325, May 9, 1984.

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