Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-11-04
2000-08-15
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257365, 257336, 257344, 257408, 257900, 257366, 438279, 438300, 438301, 438305, 438564, 438692, 438280, H01L 2976, H01L 2994, H01L 31062
Patent
active
06104069&
ABSTRACT:
A process for forming a semiconductor device having an elevated active region is disclosed. The process includes forming a plurality of gate electrodes on the semiconductor substrate and disposing a thick oxide layer over the gate electrodes. A trench is formed in a thick oxide layer and is filled with a polysilicon material. The polysilicon material is subsequently doped in order to form an elevated active region above an active region of the substrate.
REFERENCES:
patent: 5124276 (1992-06-01), Samata et al.
patent: 5198378 (1993-03-01), Rodder et al.
patent: 5270234 (1993-12-01), Huang et al.
patent: 5371026 (1994-12-01), Hayden et al.
patent: 5376578 (1994-12-01), Hsu et al.
patent: 5597746 (1997-01-01), Prall
patent: 5677573 (1997-10-01), Prall et al.
patent: 5872038 (1999-02-01), Duane et al.
Wolf, S., Silicon Processing for the VLSI Era, vol. 2: Processing Integration, pp. 154-169, copyright 1990.
Duane Michael
Gardner Mark I.
Kadosh Daniel
Advanced Micro Devices , Inc.
Saadat Mahshid
Warren Matthew E.
LandOfFree
Semiconductor device having an elevated active region formed in does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having an elevated active region formed in , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an elevated active region formed in will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2009555