Non-volatile memory having a silicide film on memory control gat

Details Non-volatile memory having a silicide film on memory control gat Non-volatile memory having a silicide film on memory control gat

1999-01-14

2000-08-15

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257316, 257319, 257321, 257326, 257754, 257755, 257756, 257757, 257758, 257759, 257760, H01L 2976, H01L 29788, H01L 29792

Patent

active

061040592

ABSTRACT:
In a non-volatile memory, memory cells have respective floating gates formed of a first polysilicon and respective control gates formed of a second polysilicon. Further, in the non-volatile memory, peripheral circuits include transistors having respective gates formed of the first polysilicon. In addition, a silicide layer is formed directly on the control gates of the memory cells and directly on the gates of the transistors.

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Y. Takeuchi et al., "A Self-Aligned STI Process Integration for Low Cost and Highly Reliable 1Gbit Flash Memories," 1998 Symposium on VLSI Technology Digest of Technical Papers, pp. 102 and 103.

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