Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-17
2000-08-15
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, 257307, 257532, 438241, 438253, 438396, H01L 27108
Patent
active
061040533
ABSTRACT:
Obtaining a semiconductor device which can reduce the occupied area of a capacitor in a logic circuit area while ensuring a constant capacitance without increasing the number of steps of fabricating the semiconductor device, and a method of fabricating the same. A first electrode of a capacitor is formed in the logic circuit area. A dielectric film consisting of a first interlayer isolation film is formed on the first electrode. A second electrode is formed on the first interlayer isolation film. A second dielectric film consisting of a second interlayer isolation film is formed on the second electrode. A third electrode is formed on the second interlayer isolation film. A connecting wire connects the first electrode and the third electrode with each other through openings in the first and third connecting regions.
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patent: 5767541 (1998-06-01), Hanagasaki
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patent: 5864153 (1999-01-01), Nagel et al.
patent: 5920775 (1999-07-01), Koh
Mitsubishi Denki & Kabushiki Kaisha
Monin, Jr. Donald L.
Pham Hoai
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