Process for producing electrooptical apparatus and process for p

Details Process for producing electrooptical apparatus and process for p Process for producing electrooptical apparatus and process for p

1999-09-29

2000-08-15

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438 30, 349161, H01L 2184

Patent

active

061035580

ABSTRACT:
A single crystal silicon thin film having a high electron/hole mobility is uniformly formed at a relatively low temperature, so that production of an active matrix substrate having a built-in high performance driver and an electrooptical apparatus, such as a thin film semiconductor apparatus for display, becomes possible. A single crystal silicon layer is formed by hetero-epitaxial growth from a molten liquid layer of a low melting point metal having silicon dissolved therein by using a crystalline sapphire film formed on a substrate as a seed, and the single crystal silicon layer is used in a top gate type MOS TFT of an electrooptical apparatus, such as an LCD, in which a display part and a peripheral driving circuit are integrated.

REFERENCES:
patent: 5162892 (1992-11-01), Hayashi et al.
patent: 5835179 (1998-11-01), Yamanaka
patent: 6025217 (2000-02-01), Kanaya et al.

Affiliated with

Also associated with

Rating

Process for producing electrooptical apparatus and process for p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing electrooptical apparatus and process for p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing electrooptical apparatus and process for p will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2005776