Thin-film transistor and method of manufacturing the same

Details Thin-film transistor and method of manufacturing the same Thin-film transistor and method of manufacturing the same

1999-01-11

2000-08-15

Zarabian, Amir

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438158, 438763, H01L 2100, H01L 2131

Patent

active

061035564

ABSTRACT:
A thin-film transistor (3, 5a, 5b and 5c) is covered with a first silicon nitride film (9) formed by an LPCVD method. A first silicon oxide film (6) is formed on the first silicon nitride film (9). A silicon nitride film (7), i.e., passivation film which is formed by a plasma CVD method is provided on the first silicon oxide film (6).

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S. Maeda et al., "Negative Bias Temperature Instability in Poly-Si TFT's", 1993 VLSI Symposium, pp. 29-30, Month Unknown.
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