Piezoelectric thin-film device, process for manufacturing the sa

Details Piezoelectric thin-film device, process for manufacturing the sa Piezoelectric thin-film device, process for manufacturing the sa

1998-02-24

2000-08-15

McDonald, Rodney

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 427100, 42725519, 42725521, 42725531, 42725532, 117 58, 117 63, 117 95, 117106, C23C 1434, B05D 512, C03B 2500

Patent

active

061030724

ABSTRACT:
A piezoelectric thin-film device includes: a substrate; and a piezoelectric thin film formed on the substrate, wherein a thickness of the piezoelectric thin film is 1 to 10 .mu.m, a crystal grain size of the piezoelectric thin film is 0.05 to 1 .mu.m, and a surface roughness (Rmax) of the piezoelectric thin film is no more than 1 .mu.m.

REFERENCES:
patent: 3853596 (1974-12-01), Distler et al.
patent: 5265315 (1993-11-01), Hoisington et al.
patent: 5537863 (1996-07-01), Fujiu et al.
patent: 5543019 (1996-08-01), Lee et al.
Kikuchi et al., "Bending Actuator using Lead Zirconate Titanate Thin Film Fabricated by Hydrothermal Method", Japanese Journal of Applied Physics, vol. 31, No. 9B, pp. 3090-3093, Sep. 1992.
"Bending Actuator Using Lead Zirconate Titanate Thin Film Fabricated By Hydrothermal Method", Kikuchi et al., Japanese Journal of Applied Physics, vol. 31, No. 9B, Sep. 1, 1992; pp. 3090-3093, XP000355714.

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