Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1989-10-19
1991-01-01
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429808, 20429803, 20429823, 20429826, 427 9, 118712, 118718, 118721, C23C 1452
Patent
active
049815660
ABSTRACT:
A process chamber 27 is provided with several successive cathode arrangements 7, 8 which have targets to be sputtered, wherein diaphragms 39, 40 are held between the respective targets 3, 4 and the path of the workpieces 1, 2. In addition to their center openings 66, 67 for the passage of the flow of coating material, further window-like apertures 68, 69 in the area of the material flow, respectively, which are disposed offset to one another and transversely to the conveying direction F of the substrates and thus produce test strips 70, 71 on the workpieces or special test substrates which are passed by the cathode arrangements 7, 8. The test strips each correspond to one single layer of a layer package 72, produced on the substrate, whereby thickness of each layer may be measured by acquiring data on the transmission, reflection, or resistance properties, or by mechanically measuring each layer.
REFERENCES:
patent: 3661760 (1972-05-01), Borgne et al.
patent: 4676883 (1987-06-01), Nelson et al.
patent: 4858556 (1989-08-01), Siebert
Leybold Aktiengesellschaft
Weisstuch Aaron
LandOfFree
Arrangement for measuring the thickness of thin layers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Arrangement for measuring the thickness of thin layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Arrangement for measuring the thickness of thin layers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1994316