Transistor structure and method for fabricating the same

Details Transistor structure and method for fabricating the same Transistor structure and method for fabricating the same

1996-06-12

1997-08-26

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257336, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056613270

ABSTRACT:
A transistor including an insulating film, a gate, and a source/drain all formed on a semiconductor substrate, wherein the gate overlaps at an edge thereof with the source/drain disposed below the gate, whereby the transistor has a structure capable of avoiding a direct contact between the metal wiring and the source/drain. The gate is formed after a formation of the source/drain.

REFERENCES:
patent: 4463491 (1984-08-01), Goldman et al.
patent: 4804636 (1989-02-01), Groover, III
patent: 4925807 (1990-05-01), Yoshikawa
patent: 4971922 (1990-11-01), Watabe et al.

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