Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-02
1997-08-26
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257327, 257329, 257330, H01L 2976, H01L 2994
Patent
active
056613229
ABSTRACT:
One or more diodes are integrated with a trenched gate accumulation-mode MOSFET to provide protection for the gate oxide layer. In a preferred embodiment, a first pair of diodes are formed in a series connection between the source and the gate of the MOSFET. A third diode may be added to provide a series diode pair between the drain and the gate of the MOSFET. A pair of accumulation-mode MOSFETs may be formed in a single chip to provide a push-pull halfbridge circuit, and a multiple-phase motor driver may be fabricated in two chips, with the high side MOSFETs being formed in one chip and the low side MOSFETs being formed in the other chip. The accumulation-mode MOSFET may be used as an AC switch by connecting its gate to a gate bias circuit which finds the lower of the source and drain voltages of the accumulation-mode MOSFET.
REFERENCES:
patent: 4663644 (1987-05-01), Shimizu
patent: 4903189 (1990-02-01), Ngo et al.
patent: 5430315 (1995-07-01), Rumennik
B.J. Baliga et al., "The Accumulation-Mode Field-Effect Transistor: A New Ultralow On-Resistance MOSFET", IEEE Electron Device Letters, vol. 13, No. 8, Aug. 1992, pp. 427-429.
T. Syau, "Comparison of Ultralow Specific On-Resistance UMOSFET Structures: The ACCUFET, EXTFET, INVFET, and Conventional UMOSFET's", IEEE Transactions on Electon Devices, vol. 41, No. 5, May 1994, pp. 800-808.
Mallikarjunaswamy Shekar S.
Williams Richard K.
Martin Wallace Valencia
Saadat Mahshid D.
Siliconix incorporated
Steuber David E.
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