Hydrogen annealing process for stabilizing metal-oxide-semicondu

Details Hydrogen annealing process for stabilizing metal-oxide-semicondu Hydrogen annealing process for stabilizing metal-oxide-semicondu

1977-10-11

1979-04-24

Andrews, M. J.

Metal treatment

Compositions

Heat treating

357 52, H01I 754

Patent

active

041510070

ABSTRACT:
Variations in threshold voltage of Metal-Oxide-Silicon (MOS) structures are attenuated by the inclusion in the fabrication process of a hydrogen anneal step using a temperature range of 650 degrees C.ltoreq.T.ltoreq.950 degrees C. This anneal step is designed to be the last step in the fabrication process which is performed at temperatures above 600 degrees C.

REFERENCES:
patent: 3852120 (1974-12-01), Johnson et al.
Hofstein; S. R., Solid State Electronics, vol. 10, pp. 657-670, 1967, Pergamon Press.

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