Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1995-01-03
1997-12-30
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566561, 216 67, 216 77, H01L 21302
Patent
active
057025649
ABSTRACT:
Undercutting of conductive lines in a dense array bordered by an open field is avoided by reducing the severity of etching when the conductive material in the open field is substantially removed. In a preferred embodiment, the flow rate of chlorine gas is reduced during high density chlorine plasma etching of a conductive pattern when the conductive material is substantially removed from the open field.
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Suzuki et al., "Residue formation an elimination in chlorine-based plasma etching of Al-Si-Cu interconnections," Journal of Vacuum Science and Technology, Part B, vol. 10, No. 2, pp. 596-600, Mar. 1992.
Suzuki et al., "Residue formation and elimination in chlorine-based plasma etching of Al-Si-Cu Interconnections," Journal of Bacuum Science and Technology, Part B, vol. 10, No. 2, Apr. 1992, pp. 596-600.
Marx et al., "Electron cycloton resonance etching of aluminun alloys with BCl.sub.3 -Cl.sub.2 -N.sub.2," Journal of Vacuum Science and Technology, Part A, vol. 10, No. 4, Aug. 1992, pp. 1232-1237.
Adjodha Michael E.
Advanced Micro Devices , Inc.
Breneman R. Bruce
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