Method of etching conductive lines without undercutting

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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1566561, 216 67, 216 77, H01L 21302

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active

057025649

ABSTRACT:
Undercutting of conductive lines in a dense array bordered by an open field is avoided by reducing the severity of etching when the conductive material in the open field is substantially removed. In a preferred embodiment, the flow rate of chlorine gas is reduced during high density chlorine plasma etching of a conductive pattern when the conductive material is substantially removed from the open field.

REFERENCES:
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patent: 5207868 (1993-05-01), Shinohara
patent: 5211804 (1993-05-01), Kobayashi
patent: 5350488 (1994-09-01), Webb
patent: 5387556 (1995-02-01), Xiaobing et al.
patent: 5411631 (1995-05-01), Hori et al.
Suzuki et al., "Residue formation an elimination in chlorine-based plasma etching of Al-Si-Cu interconnections," Journal of Vacuum Science and Technology, Part B, vol. 10, No. 2, pp. 596-600, Mar. 1992.
Suzuki et al., "Residue formation and elimination in chlorine-based plasma etching of Al-Si-Cu Interconnections," Journal of Bacuum Science and Technology, Part B, vol. 10, No. 2, Apr. 1992, pp. 596-600.
Marx et al., "Electron cycloton resonance etching of aluminun alloys with BCl.sub.3 -Cl.sub.2 -N.sub.2," Journal of Vacuum Science and Technology, Part A, vol. 10, No. 4, Aug. 1992, pp. 1232-1237.

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