Process for producing a single-crystal substrate of silicon carb

Details Process for producing a single-crystal substrate of silicon carb Process for producing a single-crystal substrate of silicon carb

1984-12-19

1991-08-06

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 437243, 65 182, C30B 2500

Patent

active

050375024

ABSTRACT:
A process for producing a single-crystal substrate of silicon carbide comprises growing a single-crystal film of .alpha.-silicon carbide on a single-crystal film of .beta.-silicon carbide as a growth substrate, thereby obtaining a high quality single-crystal substrate of .alpha.-silicon carbide having a large area, which is producible on a commercial scale.

REFERENCES:
patent: 3956032 (1976-05-01), Powell et al.
patent: 3960619 (1976-06-01), Seiter
patent: 4455385 (1984-06-01), Prochazka
patent: 4512825 (1985-04-01), Addamiano et al.
patent: 4623425 (1986-11-01), Suzuki et al.

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