Semiconductor device having plural air gaps for decreasing paras

Details Semiconductor device having plural air gaps for decreasing paras Semiconductor device having plural air gaps for decreasing paras

1998-06-23

2000-10-03

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257900, 438422, 438595, H01L 2978

Patent

active

061277118

ABSTRACT:
A method of manufacturing a semiconductor device includes the step of forming a gate electrode on a semiconductor substrate via a gate insulating film and the step of forming a first insulating film on side surfaces of the gate electrode and an upper surface of the semiconductor substrate. Also the method includes the step of forming a second insulating film on the first insulating film and the step of etching back the first and second insulating films to form side walls of the gate electrode each of which includes layers of the first and second insulating films. The method includes the step of etching the first insulating films of the side walls to remain a part of the first insulating film layers.

REFERENCES:
patent: 5736446 (1998-04-01), Wu
patent: 5770507 (1998-06-01), Chen et al.
patent: 5869374 (1999-02-01), Wu
patent: 5869379 (1999-02-01), Gardner et al.
patent: 5874765 (1999-02-01), Lee et al.
patent: 5895246 (1999-04-01), Lee
patent: 5914519 (1999-06-01), Chou et al.
patent: 5972763 (1999-10-01), Chou et al.
patent: 6015746 (2000-01-01), Yeh et al.
Togo, et al. "A Gate-side Air-gap Structure (GAS) to Reduce the Parasitic Capacitance in MOSFETs", 1996 Symposium on VSLI Technology Digest of Technical Papers,pp. 38-39, 1996.

Affiliated with

Also associated with

Rating

Semiconductor device having plural air gaps for decreasing paras does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having plural air gaps for decreasing paras, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having plural air gaps for decreasing paras will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-198410