Semiconductor device having an intervening region between channe

Details Semiconductor device having an intervening region between channe Semiconductor device having an intervening region between channe

1999-01-12

2000-10-03

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257648, H01L 29772

Patent

active

061277088

ABSTRACT:
In a method for manufacturing a semiconductor device, an anti-oxidation layer is formed on a semiconductor substrate of a first conductivity type. Then, a first photoresist pattern layer for defining an active area is formed on the anti-oxidation layer, and the anti-oxidation layer is etched by using the first photoresist pattern layer as a mask. Then, a second photoresist pattern layer is formed on a part of the first photoresist pattern layer. In this case, a width of the second photoresist pattern layer is larger than a width of the part of the first photoresist pattern layer. Then, ions of the first conductivity type are introduced into the semiconductor substrate by using the first and second photoresist pattern layers as a mask. Then, the semiconductor substrate is thermally oxidized by using the anti-oxidation layer as a mask to form a semiconductor oxide layer while activating the ions to form a channel stopper region below the semiconductor oxide layer.

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