Semiconductor device having an SOI structure and manufacturing m

Details Semiconductor device having an SOI structure and manufacturing m Semiconductor device having an SOI structure and manufacturing m

1997-09-16

2000-10-03

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, H01L 2701, H01L 2712, H01L 2976, H01L 2994

Patent

active

061277029

ABSTRACT:
A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions 104 are formed in a channel forming region 103 so as to be generally parallel with the channel direction. The impurity regions 104 are effective in suppressing the short channel effects. More specifically, the impurity regions 104 suppress expansion of a drain-side depletion layer, so that the punch-through phenomenon can be prevented. Further, the impurity regions cause a narrow channel effect, so that reduction in threshold voltage can be lessened.

REFERENCES:
patent: 4959697 (1990-09-01), Shier et al.
patent: 4999682 (1991-03-01), Xu et al.
patent: 5210437 (1993-05-01), Sawada et al.
patent: 5894137 (1999-04-01), Yamazaki et al.

Affiliated with

Also associated with

Rating

Semiconductor device having an SOI structure and manufacturing m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having an SOI structure and manufacturing m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an SOI structure and manufacturing m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-198368