Non-volatile semiconductor memory using a thin film transistor

Details Non-volatile semiconductor memory using a thin film transistor Non-volatile semiconductor memory using a thin film transistor

1991-05-29

1994-05-24

Hille, Rolf

Static information storage and retrieval

Floating gate

Particular biasing

365182, 257314, 257320, G11C 1134, H01L 2968

Patent

active

053155467

ABSTRACT:
A MOS transistor has a floating gate, which forms a memory cell of EPROM, and a control gate. The control gate is formed of a thin film. An impurity concentration of a region corresponding to the floating gate is lower than that of the other regions. The region having low impurity concentration functions as a channel region of a thin film transistor. The floating gate functions as a gate of the thin film transistor. In the memory cell in which an electron is written in the floating gate, a threshold voltage of the thin film transistor rises, and the thin film transistor is set to be in an off state. In the memory cell in which no electron is written in the floating gate, the threshold voltage of the thin film transistor lowers, and the thin film transistor is set to be in an on state. If the voltage of said control gate rises in a reading operation, an inversion layer is formed in the only cell of the erasing state and the high voltage of the control gate is supplied to a channel region, and the MOS transistor is turned on. Due to this, the voltage, which is higher than the threshold value of the memory cell of the writing state, can be supplied to the control gate.

REFERENCES:
patent: 4016588 (1977-04-01), Ohya et al.
patent: 4503519 (1985-03-01), Arakawa
patent: 4597000 (1986-06-01), Adam
patent: 4725980 (1988-02-01), Wakimoto et al.
patent: 4967393 (1990-10-01), Yokoyama et al.
patent: 5040147 (1991-08-01), Yoshizawa et al.
patent: 5063423 (1991-11-01), Fujii et al.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory using a thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory using a thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory using a thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1978413