Method for reading and restoring data in a data storage element

Details Method for reading and restoring data in a data storage element Method for reading and restoring data in a data storage element

1995-08-31

1996-11-26

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

055792570

ABSTRACT:
A method for reading and restoring data in a FERAM (10) is provided. The FERAM (10) comprises a FET (11) and a ferroelectric capacitor (12). The FET (11) has a gate connected to a word line (14), a source coupled to a plate line (15) via the ferroelectric capacitor (12), and a drain connected to a bit line (16). The reading process begins by placing a predetermined amount of charge in a bit line capacitor (17), which in turn charges the ferroelectric capacitor (12) after the FET (11) is switched on, resulting in a voltage drop determined by data stored in the FERAM (10) at the bit line (16). A sense amplifier (18) adjusts the voltage at the bit line (16) accordingly to read data from the FERAM (10). Applying a voltage at the plate line (15) and switching the FET (11) off restore the data to the FERAM (10).

REFERENCES:
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 5031143 (1991-07-01), Jaffe
patent: 5270967 (1993-12-01), Moazzami et al.
Joseph T. Evans and Richard Womack, Reprint of IEEE Journal of Solid-State Circuits, "An Experimental 512-bit Nonvolatile Memory with Ferroelectric Storage Cell", Oct. 1988, vol. 23, No. 5, pp. 1171-1175 (233-237).
Ramtron International Corporation, "Fram Technology", Jan. 1994.
Ramtron International Corporation, "Benefits of Ramtron's FM24C04 Serial FRAM Memory", Feb. 1994.
Ramtron International Corporation, "FM1208S FRAM Memory", Feb. 1994.

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