Semiconductor-semiconductor compound insulator-insulator structu

Details Semiconductor-semiconductor compound insulator-insulator structu Semiconductor-semiconductor compound insulator-insulator structu

1990-08-17

1991-08-06

Stoll, Robert L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156603, 156610, 437 21, 148DIG77, 148DIG83, 148DIG150, C30B 2900, H01L 21265

Patent

active

H00009482

ABSTRACT:
A process for the interdisposition of a semiconductor compound by high dose oxygen ion implantation after a high quality single crystal semiconductor film has been formed on an insulator substrate. Specifically, in one embodiment, after the formation of a single crystal silicon semiconductor film on an insulator substrate of either sapphire or spinel, oxygen ion implantation is formed to create a silicon dioxide layer at the interface between the silicon semiconductor film and the insulator substrate in order to reduce the interface states and form a diffusion barrier between the semiconductor material and the electrical insulator substrate.

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Ajmera et al., "Effects of Hydrogen Annealing on High Power RF Sputtered sub.2 O.sub.3 Films on Silicon", J. Electrochem. Soc., Oct. 1972, pp. 1421-1424.
Lam, "Silicon on Insulating Substrates--Recent Advances", IEDM, 83, IEEE, 14.1, pp. 348-351.

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